The Ion beam physics group is engaged with modification of solids and synthesis of buried nano structures using ion beams and subsequent treatments. Special focus is directed to III-V semiconductors and wide-band-gap oxidic materials, which are interesting because of their high transparancy to visible light and their potential application in electronic and optical devices. Specifically, we study the effect of nuclear and electronic energy deposition of the implanted ions in the mostly crystalline materials. Another important part of our work is ion beam analysis such as Rutherford backscattering spectrometry (RBS) and Nuclear reaction analysis (NRA). These techniques are applied for studying the structure and chemical composition of ion implanted and other thin layers.